SIS176LDN-T1-GE3

Vishay Siliconix

제품 번호:

SIS176LDN-T1-GE3

제조업체:

패키지:

PowerPAK® 1212-8

배치:

데이터 시트:

설명:

N-CHANNEL 70 V (D-S) MOSFET POWE

수량:

배달:

지불:

재고 : 19985

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1660 pF @ 35 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	10.9mOhm @ 10A, 4.5V
Supplier Device Package	PowerPAK® 1212-8
Vgs(th) (Max) @ Id	1.6V @ 250µA
Drain to Source Voltage (Vdss)	70 V
Power Dissipation (Max)	3.6W (Ta), 39W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	12.9A (Ta), 42.3A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	3.3V, 4.5V
Package	Tape & Reel (TR)