G3R350MT12J

GeneSiC Semiconductor

제품 번호:

G3R350MT12J

제조업체:

패키지:

TO-263-7

배치:

데이터 시트:

설명:

SIC MOSFET N-CH 11A TO263-7

수량:

배달:

지불:

재고 : 5712

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Supplier Device Package	TO-263-7
Vgs(th) (Max) @ Id	2.69V @ 2mA
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	75W (Tc)
Series	G3R™
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Base Product Number	G3R350