1N8035-GA

GeneSiC Semiconductor

Product No:

1N8035-GA

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Package:

TO-276

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Description:

DIODE SIL CARB 650V 14.6A TO276

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	1107pF @ 1V, 1MHz
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	TO-276
Current - Reverse Leakage @ Vr	5 µA @ 650 V
Series	-
Package / Case	TO-276AA
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.5 V @ 15 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	14.6A
Operating Temperature - Junction	-55°C ~ 250°C
Base Product Number	1N8035