BSM400D12P2G003
Rohm Semiconductor
Product No:
BSM400D12P2G003
Manufacturer:
Package:
Module
Batch:
-
Datasheet:
-
Description:
SILICON CARBIDE POWER MODULE. B
Quantity:
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In Stock : 4
Minimum: 1 Multiples: 1
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Unit Price
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$2088.974
$2088.974
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Product Information
Parameter Info
User Guide
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Half Bridge) |
| Input Capacitance (Ciss) (Max) @ Vds | 38000pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | - |
| Supplier Device Package | Module |
| Vgs(th) (Max) @ Id | 4V @ 85mA |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Series | - |
| Package / Case | Module |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 2450W (Tc) |
| Mfr | Rohm Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tc) |
| Package | Bulk |
| Base Product Number | BSM400 |
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