BSO303SP

Infineon Technologies

Product No:

BSO303SP

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Package:

PG-DSO-8-1

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Description:

P-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	21mOhm @ 9.1A, 10V
Supplier Device Package	PG-DSO-8-1
Vgs(th) (Max) @ Id	2V @ 100µA
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	1.56W (Ta)
Series	OptiMOS® -P
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk