CSICD10-650 BK

Central Semiconductor Corp

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CSICD10-650 BK

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Package:

DPAK

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Description:

DIODE SIL CARBIDE 650V 10A DPAK

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	325pF @ 1V, 1MHz
Mounting Type	Surface Mount
Product Status	Obsolete
Supplier Device Package	DPAK
Current - Reverse Leakage @ Vr	125 µA @ 650 V
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Mfr	Central Semiconductor Corp
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Tube
Current - Average Rectified (Io)	10A
Operating Temperature - Junction	-55°C ~ 175°C