EPC
Product No:
EPC2019
Manufacturer:
Package:
Die
Batch:
-
Description:
GANFET N-CH 200V 8.5A DIE
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.3535
$3.3535
10
$3.01435
$30.1435
100
$2.469715
$246.9715
500
$2.102464
$1051.232
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| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 288 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 5 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 7A, 5V |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 1.5mA |
| Drain to Source Voltage (Vdss) | 200 V |
| Power Dissipation (Max) | - |
| Series | eGaN® |
| Package / Case | Die |
| Technology | GaNFET (Gallium Nitride) |
| Mfr | EPC |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Ta) |
| Vgs (Max) | +6V, -4V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Package | Tape & Reel (TR) |
| Base Product Number | EPC20 |