G08N06S

Goford Semiconductor

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G08N06S

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8-SOP

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Description:

N60V, RD(MAX)<30M@10V,RD(MAX)<40

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	979 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	30mOhm @ 3A, 10V
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Ta)
Series	G
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)