G130N06M

Goford Semiconductor

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G130N06M

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Package:

TO-263

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N60V, 90A,RD<12M@10V,VTH1.0V~2.4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2867 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	36.6 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	12mOhm @ 20A, 10V
Supplier Device Package	TO-263
Vgs(th) (Max) @ Id	2.4V @ 250µA
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	85W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)