G1K3N10LL

Goford Semiconductor

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G1K3N10LL

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Package:

SOT-23-6L

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Description:

MOSFET N-CH 100V 3.4A SOT-23-6L

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	808 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	130mOhm @ 1A, 10V
Supplier Device Package	SOT-23-6L
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.28W (Tc)
Series	-
Package / Case	SOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	3.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)