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G65P06D5

Goford Semiconductor

Product No:

G65P06D5

Manufacturer:

Goford Semiconductor

Package:

8-DFN (4.9x5.75)

Batch:

-

Datasheet:

-

Description:

P60V,RD(MAX)<18M@-10V,VTH-2V~-3V

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 6697

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.0735

    $1.0735

  • 10

    $0.88065

    $8.8065

  • 100

    $0.685045

    $68.5045

  • 500

    $0.580697

    $290.3485

  • 1000

    $0.473034

    $473.034

  • 2000

    $0.445303

    $890.606

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 5814 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 18mOhm @ 20A, 10V
Supplier Device Package 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id 3.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 130W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)