GAN063-650WSAQ

Nexperia USA Inc.

Product No:

GAN063-650WSAQ

Manufacturer:

Package:

TO-247-3

Batch:

Datasheet:

Description:

GANFET N-CH 650V 34.5A TO247-3

Quantity:

Delivery:

Payment:

In Stock : 623

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Supplier Device Package	TO-247-3
Vgs(th) (Max) @ Id	4.5V @ 1mA
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	143W (Ta)
Series	-
Package / Case	TO-247-3
Technology	GaNFET (Cascode Gallium Nitride FET)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	34.5A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	GAN063