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GAN7R0-150LBEZ

Nexperia USA Inc.

Product No:

GAN7R0-150LBEZ

Manufacturer:

Nexperia USA Inc.

Package:

3-FCLGA (3.2x2.2)

Batch:

-

Datasheet:

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Description:

150 V, 7 MOHM GALLIUM NITRIDE (G

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 2265

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.8095

    $3.8095

  • 10

    $3.20245

    $32.0245

  • 100

    $2.59065

    $259.065

  • 500

    $2.3028

    $1151.4

  • 1000

    $1.971772

    $1971.772

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 85 V
Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 7mOhm @ 10A, 5V
Supplier Device Package 3-FCLGA (3.2x2.2)
Vgs(th) (Max) @ Id 2.1V @ 5mA
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 28W
Series -
Package / Case 3-VLGA
Technology GaNFET (Gallium Nitride)
Mfr Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C 28A
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)
Base Product Number GAN7R0