GD10MPS17H

GeneSiC Semiconductor

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GD10MPS17H

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Package:

TO-247-2

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Description:

DIODE SIL CARB 1.7KV 26A TO247-2

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Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Capacitance @ Vr, F	721pF @ 1V, 1MHz
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-247-2
Current - Reverse Leakage @ Vr	20 µA @ 1700 V
Series	SiC Schottky MPS™
Package / Case	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 10 A
Mfr	GeneSiC Semiconductor
Voltage - DC Reverse (Vr) (Max)	1700 V
Package	Tube
Current - Average Rectified (Io)	26A
Operating Temperature - Junction	-55°C ~ 175°C