GT095N10S

Goford Semiconductor

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GT095N10S

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Package:

8-SOP

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Description:

N100V, 21A,RD<9.5M@10V,VTH1.2V~2

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2131 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	29.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.5mOhm @ 20A, 10V
Supplier Device Package	8-SOP
Vgs(th) (Max) @ Id	2.6V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	8W (Tc)
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)