IXTP6N100D2

IXYS

Product No:

IXTP6N100D2

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Package:

TO-220-3

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Description:

MOSFET N-CH 1000V 6A TO220AB

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 5 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.2Ohm @ 3A, 0V
Supplier Device Package	TO-220-3
Vgs(th) (Max) @ Id	-
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	300W (Tc)
Series	Depletion
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tube
Base Product Number	IXTP6