PSMN070-200P,127

NXP Semiconductors

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PSMN070-200P,127

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TO-220AB

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NEXPERIA PSMN070-200P - 35A, 200

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	70mOhm @ 17A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	250W (Tc)
Series	TrenchMOS™
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk