SCT3120ALGC11

Rohm Semiconductor

Product No:

SCT3120ALGC11

Manufacturer:

Package:

TO-247N

Batch:

Datasheet:

Description:

SICFET N-CH 650V 21A TO247N

Quantity:

Delivery:

Payment:

In Stock : 2746

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	156mOhm @ 6.7A, 18V
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	5.6V @ 3.33mA
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	103W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Vgs (Max)	+22V, -4V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT3120