SI2387DS-T1-GE3

Vishay Siliconix

Product No:

SI2387DS-T1-GE3

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Package:

SOT-23-3 (TO-236)

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Description:

P-CHANNEL -80V SOT-23, 164 M @ 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	395 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	10.2 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	164mOhm @ 2.1A, 10V
Supplier Device Package	SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	1.3W (Ta), 2.5W (Tc)
Series	TrenchFET® Gen IV
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	2.1A (Ta), 3A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)