SI3129DV-T1-GE3

Vishay Siliconix

Product No:

SI3129DV-T1-GE3

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Package:

6-TSOP

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Description:

P-CHANNEL 80 V (D-S) MOSFET TSOP

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	805 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	82.7mOhm @ 3.8A, 10V
Supplier Device Package	6-TSOP
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Series	TrenchFET®
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.8A (Ta), 5.4A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)