SIRS700DP-T1-GE3

Vishay Siliconix

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SIRS700DP-T1-GE3

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PowerPAK® SO-8

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Description:

N-CHANNEL 100 V (D-S) MOSFET POW

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	7.4W (Ta),132W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 127A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)