SIS439DNT-T1-GE3

Vishay Siliconix

Product No:

SIS439DNT-T1-GE3

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Package:

PowerPAK® 1212-8S

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Description:

MOSFET P-CH 30V 50A PPAK1212-8S

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Operating Temperature	-50°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2135 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	11mOhm @ 14A, 10V
Supplier Device Package	PowerPAK® 1212-8S
Vgs(th) (Max) @ Id	2.8V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.8W (Ta), 52.1W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIS439