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SISA18BDN-T1-GE3

Vishay Siliconix

Product No:

SISA18BDN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8PT

Batch:

-

Datasheet:

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Description:

N-CHANNEL 30 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 5888

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.6365

    $0.6365

  • 10

    $0.55195

    $5.5195

  • 100

    $0.3819

    $38.19

  • 500

    $0.319105

    $159.5525

  • 1000

    $0.271576

    $271.576

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 6.83mOhm @ 10A, 10V
Supplier Device Package PowerPAK® 1212-8PT
Vgs(th) (Max) @ Id 2.4V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.2W (Ta), 36.8W (Tc)
Series TrenchFET® Gen IV
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 60A (Tc)
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISA18