SIUD412ED-T1-GE3

Vishay Siliconix

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SIUD412ED-T1-GE3

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Package:

PowerPAK® 0806

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Description:

MOSFET N-CH 12V 500MA PPAK 0806

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	21 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs	0.71 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	340mOhm @ 500mA, 4.5V
Supplier Device Package	PowerPAK® 0806
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	12 V
Power Dissipation (Max)	1.25W (Ta)
Series	TrenchFET®
Package / Case	PowerPAK® 0806
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	500mA (Tc)
Vgs (Max)	±5V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SIUD412