SQUN702E-T1_GE3
Vishay Siliconix
Product No:
SQUN702E-T1_GE3
Manufacturer:
Package:
Die
Batch:
-
Datasheet:
Description:
MOSFET N&P-CH COMMON DRAIN
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Configuration | N and P-Channel, Common Drain |
| Input Capacitance (Ciss) (Max) @ Vds | 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V |
| Mounting Type | Surface Mount, Wettable Flank |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA, 3.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 40V, 200V |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | Die |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 48W (Tc), 60W (Tc) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc), 20A (Tc) |
| Package | Tape & Reel (TR) |
| Base Product Number | SQUN702 |
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