STL3NM60N

STMicroelectronics

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STL3NM60N

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Package:

PowerFlat™ (3.3x3.3)

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Description:

MOSFET N-CH 600V 0.65A POWERFLAT

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	188 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	9.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.8Ohm @ 1A, 10V
Supplier Device Package	PowerFlat™ (3.3x3.3)
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	2W (Ta), 22W (Tc)
Series	MDmesh™ II
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	650mA (Ta), 2.2A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	STL3NM60