TSM2312CX RFG

Taiwan Semiconductor Corporation

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TSM2312CX RFG

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Package:

SOT-23

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Description:

MOSFET N-CHANNEL 20V 4.9A SOT23

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	11.2 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	33mOhm @ 4.9A, 4.5V
Supplier Device Package	SOT-23
Vgs(th) (Max) @ Id	1V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	750mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C	4.9A (Tc)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	TSM2312