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APTM50UM19SG

Microsemi Corporation

Producto No:

APTM50UM19SG

Paquete:

Module

Lote:

-

Ficha de datos:

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Descripción:

MOSFET N-CH 500V 163A MODULE

Cantidad:

Entrega:

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Pago:

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 22400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 492 nC @ 10 V
Mounting Type Chassis Mount
Product Status Discontinued at Digi-Key
Rds On (Max) @ Id, Vgs 19mOhm @ 81.5A, 10V
Supplier Device Package Module
Vgs(th) (Max) @ Id 5V @ 10mA
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 1136W (Tc)
Series -
Package / Case J3 Module
Technology MOSFET (Metal Oxide)
Mfr Microsemi Corporation
Current - Continuous Drain (Id) @ 25°C 163A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk