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DMT64M2LPSW-13

Diodes Incorporated

Producto No:

DMT64M2LPSW-13

Paquete:

PowerDI5060-8 (Type Q)

Lote:

-

Ficha de datos:

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Descripción:

MOSFET N-CH 60V 20.7A/100A PWRDI

Cantidad:

Entrega:

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Pago:

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En stock : Por favor investigación

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2799 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 46.7 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Supplier Device Package PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 2.8W (Ta), 83.3W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C 20.7A (Ta), 100A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number DMT64