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IRF6611

Infineon Technologies

Producto No:

IRF6611

Paquete:

DIRECTFET™ MX

Lote:

-

Ficha de datos:

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Descripción:

MOSFET N-CH 30V 32A DIRECTFET

Cantidad:

Entrega:

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Pago:

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En stock : Por favor investigación

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Información del producto

Parámetro Info

Guía del usuario

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 4.5 V
Mounting Type Surface Mount
Product Status Obsolete
Rds On (Max) @ Id, Vgs 2.6mOhm @ 27A, 10V
Supplier Device Package DIRECTFET™ MX
Vgs(th) (Max) @ Id 2.25V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.9W (Ta), 89W (Tc)
Series HEXFET®
Package / Case DirectFET™ Isometric MX
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 150A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)