SIZF906BDT-T1-GE3

Vishay Siliconix

Producto No:

SIZF906BDT-T1-GE3

Fabricante:

Paquete:

8-PowerPair® (6x5)

Lote:

Ficha de datos:

Descripción:

DUAL N-CHANNEL 30 V (D-S) MOSFET

Cantidad:

Entrega:

Pago:

En stock : 29477

Mínimo: 1 Múltiplos: 1

Qty

Precio unitario

Precio Ext

¿No es el precio que quieres? Envíe RFQ ahora y nos pondremos en contacto con usted lo antes posible.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual), Schottky
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 15V, 5550pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V, 165nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Supplier Device Package	8-PowerPair® (6x5)
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET® Gen IV
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SIZF906