onsemi
RFQ를 보내 주시면 즉시 응답하겠습니다.
 
 
 
 
 
 
 
 
| Operating Temperature | 150°C (TJ) | 
| FET Feature | - | 
| FET Type | N-Channel | 
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 30 V | 
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | 
| Mounting Type | Through Hole | 
| Product Status | Obsolete | 
| Rds On (Max) @ Id, Vgs | 1.08Ohm @ 6A, 10V | 
| Supplier Device Package | TO-3PB | 
| Vgs(th) (Max) @ Id | 4V @ 1mA | 
| Drain to Source Voltage (Vdss) | 800 V | 
| Power Dissipation (Max) | 2.5W (Ta), 190W (Tc) | 
| Series | - | 
| Package / Case | TO-3P-3, SC-65-3 | 
| Technology | MOSFET (Metal Oxide) | 
| Mfr | onsemi | 
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) | 
| Vgs (Max) | ±30V | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Package | Tray | 
| Base Product Number | 2SK4209 |