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BSC091N03MSCGATMA1

Infineon Technologies

제품 번호:

BSC091N03MSCGATMA1

제조업체:

Infineon Technologies

패키지:

PG-TDSON-8-6

배치:

-

데이터 시트:

-

설명:

POWER FIELD-EFFECT TRANSISTOR, 1

수량:

배달:

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지불:

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재고 : 24335

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

  • 1094

    $0.2565

    $280.611

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제품 정보

매개 변수 정보

사용자 가이드

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 9.1mOhm @ 30A, 10V
Supplier Device Package PG-TDSON-8-6
Vgs(th) (Max) @ Id 2V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Series SIPMOS®
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 44A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk