G2R50MT33K

GeneSiC Semiconductor

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G2R50MT33K

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Package:

TO-247-4

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Description:

3300V 50M TO-247-4 SIC MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Standard
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7301 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	340 nC @ 20 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
Supplier Device Package	TO-247-4
Vgs(th) (Max) @ Id	3.5V @ 10mA (Typ)
Drain to Source Voltage (Vdss)	3300 V
Power Dissipation (Max)	536W (Tc)
Series	G2R™
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	63A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube