GAN190-650EBEZ

Nexperia USA Inc.

제품 번호:

GAN190-650EBEZ

제조업체:

패키지:

DFN8080-8

배치:

데이터 시트:

설명:

650 V, 190 MOHM GALLIUM NITRIDE

수량:

배달:

지불:

재고 : 2401

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	96 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	2.8 nC @ 6 V
Mounting Type	Surface Mount, Wettable Flank
Product Status	Active
Rds On (Max) @ Id, Vgs	190mOhm @ 3.9A, 6V
Supplier Device Package	DFN8080-8
Vgs(th) (Max) @ Id	2.5V @ 12.2mA
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	125W (Ta)
Series	-
Package / Case	8-VDFN Exposed Pad
Technology	GaNFET (Gallium Nitride)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Vgs (Max)	+7V, -1.4V
Drive Voltage (Max Rds On, Min Rds On)	6V
Package	Tape & Reel (TR)
Base Product Number	GAN190