GAN3R2-100CBEAZ

Nexperia USA Inc.

제품 번호:

GAN3R2-100CBEAZ

제조업체:

패키지:

8-WLCSP (3.5x2.13)

배치:

데이터 시트:

설명:

100 V, 3.2 MOHM GALLIUM NITRIDE

수량:

배달:

지불:

재고 : 1379

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.2mOhm @ 25A, 5V
Supplier Device Package	8-WLCSP (3.5x2.13)
Vgs(th) (Max) @ Id	2.5V @ 9mA
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	394W
Series	-
Package / Case	8-XFBGA, WLCSP
Technology	GaNFET (Gallium Nitride)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	60A
Vgs (Max)	+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Tape & Reel (TR)
Base Product Number	GAN3R2