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HTNFET-D

Honeywell Aerospace

제품 번호:

HTNFET-D

제조업체:

Honeywell Aerospace

패키지:

8-CDIP-EP

배치:

-

데이터 시트:

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설명:

MOSFET N-CH 55V 8CDIP

수량:

배달:

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지불:

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제품 정보

매개 변수 정보

사용자 가이드

Operating Temperature -55°C ~ 225°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 28 V
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 5 V
Mounting Type Through Hole
Product Status Active
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Supplier Device Package 8-CDIP-EP
Vgs(th) (Max) @ Id 2.4V @ 100µA
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 50W (Tj)
Series HTMOS™
Package / Case 8-CDIP Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr Honeywell Aerospace
Current - Continuous Drain (Id) @ 25°C -
Vgs (Max) 10V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Bulk
Base Product Number HTNFET