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MSCSM120HRM311AG

Microchip Technology

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MSCSM120HRM311AG

제조업체:

Microchip Technology

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데이터 시트:

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설명:

PM-MOSFET-SIC- SP1F

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사용자 가이드

Operating Temperature -40°C ~ 175°C (TJ)
FET Feature Silicon Carbide (SiC)
Configuration 4 N-Channel (Three Level Inverter)
Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V, 4500pF @ 700V
Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V, 215nC @ 20V
Mounting Type Chassis Mount
Product Status Active
Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V
Supplier Device Package -
Vgs(th) (Max) @ Id 2.8V @ 3mA, 2.4V @ 4mA
Drain to Source Voltage (Vdss) 1200V (1.2kV), 700V
Series -
Package / Case Module
Technology Silicon Carbide (SiC)
Power - Max 395W (Tc), 365W (Tc)
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 89A (Tc), 124A (Tc)
Package Bulk