NTH4L060N090SC1

onsemi

제품 번호:

NTH4L060N090SC1

제조업체:

패키지:

TO-247-4L

배치:

데이터 시트:

설명:

SILICON CARBIDE MOSFET, NCHANNEL

수량:

배달:

지불:

재고 : 137

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1770 pF @ 450 V
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 15 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	43mOhm @ 20A, 18V
Supplier Device Package	TO-247-4L
Vgs(th) (Max) @ Id	4.3V @ 5mA
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	221W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube