NVH4L015N065SC1
onsemi
Product No:
NVH4L015N065SC1
Manufacturer:
Package:
TO-247-4L
Batch:
-
Datasheet:
Description:
SIC MOS TO247-4L 650V
Quantity:
Delivery:
Payment:
In Stock : 450
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$61.275
$61.275
10
$55.7023
$557.023
30
$53.845686
$1615.37058
90
$50.132346
$4511.91114
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4790 pF @ 325 V |
| Gate Charge (Qg) (Max) @ Vgs | 283 nC @ 18 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 75A, 18V |
| Supplier Device Package | TO-247-4L |
| Vgs(th) (Max) @ Id | 4.3V @ 25mA |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 500W (Tc) |
| Series | Automotive, AEC-Q101 |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | onsemi |
| Current - Continuous Drain (Id) @ 25°C | 142A (Tc) |
| Vgs (Max) | +22V, -8V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Package | Tray |
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