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PJQ5606_R2_00001

Panjit International Inc.

제품 번호:

PJQ5606_R2_00001

패키지:

DFN5060B-8

배치:

-

데이터 시트:

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설명:

30V COMPLEMENTARY ENHANCEMENT MO

수량:

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제품 정보

매개 변수 정보

사용자 가이드

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds 429pF @ 25V, 846pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V, 7.8nC @ 4.5V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Supplier Device Package DFN5060B-8
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 1.7W (Ta), 21W (Tc)
Mfr Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Package Tape & Reel (TR)
Base Product Number PJQ5606