NXP USA Inc.
RFQ를 보내 주시면 즉시 응답하겠습니다.
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | P-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
Mounting Type | Surface Mount |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 19mOhm @ 9.2A, 10V |
Supplier Device Package | 8-SO |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 6.9W (Tc) |
Series | TrenchMOS™ |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Technology | MOSFET (Metal Oxide) |
Mfr | NXP USA Inc. |
Current - Continuous Drain (Id) @ 25°C | 14.9A (Tc) |
Vgs (Max) | ±25V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Bulk |