SCT2280KEHRC11

Rohm Semiconductor

제품 번호:

SCT2280KEHRC11

제조업체:

패키지:

TO-247N

배치:

데이터 시트:

설명:

1200V, 14A, THD, SILICON-CARBIDE

수량:

배달:

지불:

재고 : 450

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	667 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 400 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	364mOhm @ 4A, 18V
Supplier Device Package	TO-247N
Vgs(th) (Max) @ Id	4V @ 1.4mA
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	108W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Vgs (Max)	+22V, -6V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCT2280