SCTW90N65G2V

STMicroelectronics

제품 번호:

SCTW90N65G2V

제조업체:

패키지:

HiP247™

배치:

데이터 시트:

설명:

SICFET N-CH 650V 90A HIP247

수량:

배달:

지불:

재고 : 2

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	25mOhm @ 50A, 18V
Supplier Device Package	HiP247™
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	390W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube
Base Product Number	SCTW90