SCTWA60N120G2-4

STMicroelectronics

제품 번호:

SCTWA60N120G2-4

제조업체:

패키지:

TO-247-4

배치:

데이터 시트:

설명:

SILICON CARBIDE POWER MOSFET 120

수량:

배달:

지불:

재고 : 392

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 18V
Supplier Device Package	TO-247-4
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	388W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Vgs (Max)	+22V, -10V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tube