SI1926DL-T1-GE3
Vishay Siliconix
Product No:
SI1926DL-T1-GE3
Manufacturer:
Package:
SC-70-6
Batch:
-
Datasheet:
Description:
MOSFET 2N-CH 60V 0.37A SOT363
Quantity:
Delivery:
Payment:
In Stock : 2602
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.38
$0.38
10
$0.323
$3.23
100
$0.224485
$22.4485
500
$0.175294
$87.647
1000
$0.142481
$142.481
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Logic Level Gate |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 340mA, 10V |
| Supplier Device Package | SC-70-6 |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Drain to Source Voltage (Vdss) | 60V |
| Series | TrenchFET® |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 510mW |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 370mA |
| Package | Tape & Reel (TR) |
| Base Product Number | SI1926 |
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