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SI2371EDS-T1-BE3

Vishay Siliconix

제품 번호:

SI2371EDS-T1-BE3

제조업체:

Vishay Siliconix

패키지:

SOT-23-3 (TO-236)

배치:

-

데이터 시트:

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설명:

P-CHANNEL 30-V (D-S) MOSFET

수량:

배달:

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제품 정보

매개 변수 정보

사용자 가이드

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 45mOhm @ 3.7A, 10V
Supplier Device Package SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id 1.5V @ 250µA
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta), 4.8A (Tc)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)