SI8497DB-T2-E1

Vishay Siliconix

Product No:

SI8497DB-T2-E1

Manufacturer:

Package:

6-microfoot

Batch:

Datasheet:

Description:

MOSFET P-CH 30V 13A 6MICROFOOT

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	53mOhm @ 1.5A, 4.5V
Supplier Device Package	6-microfoot
Vgs(th) (Max) @ Id	1.1V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.77W (Ta), 13W (Tc)
Series	TrenchFET®
Package / Case	6-UFBGA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SI8497