SIHU7N60E-GE3

Vishay Siliconix

제품 번호:

SIHU7N60E-GE3

제조업체:

패키지:

TO-251AA

배치:

데이터 시트:

설명:

MOSFET N-CH 600V 7A IPAK

수량:

배달:

지불:

재고 : 3000

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	600mOhm @ 3.5A, 10V
Supplier Device Package	TO-251AA
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	78W (Tc)
Series	-
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHU7