SIR582DP-T1-RE3

Vishay Siliconix

제품 번호:

SIR582DP-T1-RE3

제조업체:

패키지:

PowerPAK® SO-8

배치:

데이터 시트:

설명:

N-CHANNEL 80 V (D-S) MOSFET POWE

수량:

배달:

지불:

재고 : 2483

최소: 1 곱셈: 1

Qty

단위 가격

Ext 가격

원하는 가격이 아닙니까? 지금 RFQ를 보내면 최대한 빨리 연락 드리겠습니다.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3360 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	3.4mOhm @ 15A, 10V
Supplier Device Package	PowerPAK® SO-8
Vgs(th) (Max) @ Id	4V @ 250µA
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	5.6W (Ta), 92.5W (Tc)
Series	TrenchFET® Gen V
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	28.9A (Ta), 116A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)